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標簽 > infineon
英飛凌科技公司于1999年4月1日在德國慕尼黑正式成立,是全球領先的半導體公司之一。其前身是西門子集團的半導體部門,于1999年獨立,2000年上市。其中文名稱為億恒科技,2002年后更名為英飛凌科技。
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| 型號 | 描述 | 數(shù)據(jù)手冊 | 參考價格 |
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| FZ1800R17HP4_B9 | FZ1800R17HP4_B9 - IHM-B module with soft-switching Trench-IGBT4 - Infineon Technologies AG |
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| FZ1800R17HP4_B29 | FZ1800R17HP4_B29 - IHM-B module with soft-switching Trench-IGBT4 - Infineon Technologies AG |
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| FZ1800R12HP4_B9 | FZ1800R12HP4_B9 - IHM-B module with soft-switching Trench-IGBT4 - Infineon Technologies AG |
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| FZ1600R17HP4_B2 | FZ1600R17HP4_B2 - IHM-B module with soft-switching Trench-IGBT4 - Infineon Technologies AG |
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| FZ1600R17HP4 | FZ1600R17HP4 - IHM-B module with soft-switching Trench-IGBT4 - Infineon Technologies AG |
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| FZ1600R12HP4 | FZ1600R12HP4 - IHM-B module with soft-switching trench-IGBT4 - Infineon Technologies AG |
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| FZ1500R33HE3 | FZ1500R33HE3 - IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode - Infineon Technologies AG |
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| FZ1200R33HE3 | FZ1200R33HE3 - IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled3 diode - Infineon Technologies AG |
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| FZ1200R17HP4_B2 | FZ1200R17HP4_B2 - IHM-B module with soft-switching Trench-IGBT4 - Infineon Technologies AG |
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| FZ1200R12HP4 | FZ1200R12HP4 - IHM-B module with soft-switching Trench-IGBT4 - Infineon Technologies AG |
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| FZ1000R33HL3 | FZ1000R33HL3 - IHM-B module with Trench/Fieldstop IGBT3 and Emitter Controlled3 diode - Infineon Technologies AG |
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| FZ1000R33HE3 | FZ1000R33HE3 - IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled3 diode - Infineon Technologies AG |
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| MMBTA92 | MMBTA92 - PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets and switching power supplies - Infineon Technologies AG |
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| MMBTA56 | MMBTA56 - PNP Silicon AF Transistor Low collector-emitter saturation voltage - Infineon Technologies AG |
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| MMBTA42 | MMBTA42 - NPN Silicon High-Voltage Transistors Low collector-emitter saturation voltage - Infineon Technologies AG |
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| MMBTA14 | MMBTA14 - NPN Silicon Darlington Transistor High collector current Low collector-emitter saturation voltage - Infineon Technologies AG |
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| MMBTA06 | MMBTA06 - NPN Silicon AF Transistor Low collector-emitter saturation voltage - Infineon Technologies AG |
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| MMBT3906 | MMBT3906 - PNP Silicon Switching Transistor - Infineon Technologies AG |
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| MMBT3904 | MMBT3904 - NPN Silicon Switching Transistors - Infineon Technologies AG |
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| MMBT2907A | MMBT2907A - PNP Silicon Switching Transistor Low collector-emitter saturation voltage - Infineon Technologies AG |
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| MMBT2222A | MMBT2222A - NPN Silicon Switching Transistor Low collector-emitter saturation voltage - Infineon Technologies AG |
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| MMBD914 | MMBD914 - Silicon Switching Diode - Infineon Technologies AG |
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| MMBD7000 | MMBD7000 - Silicon Switching Diode Array - Infineon Technologies AG |
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| 1ED020I12FTA | 1ED020I12FTA - Single IGBT Driver IC - Infineon Technologies AG |
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| 1ED020I12FA | 1ED020I12FA - Single IGBT Driver IC - Infineon Technologies AG |
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| 1ED020I12-F | 1ED020I12-F - Single IGBT Driver IC - Infineon Technologies AG |
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| FS800R07A2E3 | FS800R07A2E3 - HybridPACK 2 module with trench/fieldstop IGBT3 and Emitter Controlled diode - Infineon Technologies AG |
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| FS75R12W2T4_B11 | FS75R12W2T4_B11 - EasyPACK 2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode - Infineon Technologies AG |
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| FS75R12W2T4 | FS75R12W2T4 - EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC - Infineon Technologies AG |
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| FS75R12KT4_B15 | FS75R12KT4_B15 - EconoPACK2 module with trench/fieldstop IGBT4 and Emitter Controlled4 Diode - Infineon Technologies AG |
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