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標(biāo)簽 > intersil
Intersil公司是一家全球性的技術(shù)領(lǐng)先者,專門設(shè)計(jì)和制造高性能的模擬半導(dǎo)體。Intersil總部設(shè)在圣何塞,加利福尼亞州,Intersil的使命是成為首屈一指的高性能模擬公司。
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| 型號(hào) | 描述 | 數(shù)據(jù)手冊(cè) | 參考價(jià)格 |
|---|---|---|---|
| FSPYC260R | FSPYC260R - Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs - Intersil Corporation |
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| FSPYC260F3 | FSPYC260F3 - Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs - Intersil Corporation |
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| FSPYC260F | FSPYC260F - Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs - Intersil Corporation |
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| FSPYC260D1 | FSPYC260D1 - Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs - Intersil Corporation |
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| FSPS230F3 | FSPS230F3 - Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs - Intersil Corporation |
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| FSPS230F | FSPS230F - Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs - Intersil Corporation |
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| FSPL230R3 | FSPL230R3 - Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs - Intersil Corporation |
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| FSPL230R | FSPL230R - Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs - Intersil Corporation |
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| FSPL230F | FSPL230F - Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs - Intersil Corporation |
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| FSPL230D1 | FSPL230D1 - Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs - Intersil Corporation |
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| FSL23A0D3 | FSL23A0D3 - 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs - Intersil Corporation |
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| FSL23A0D | FSL23A0D - 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs - Intersil Corporation |
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| FSL13A0R4 | FSL13A0R4 - 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs - Intersil Corporation |
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| FSL13A0R3 | FSL13A0R3 - 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs - Intersil Corporation |
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| FSL13A0R1 | FSL13A0R1 - 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs - Intersil Corporation |
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| FSL13A0R | FSL13A0R - 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs - Intersil Corporation |
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| FSL13A0D | FSL13A0D - 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs - Intersil Corporation |
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| FSJ160R4 | FSJ160R4 - 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs - Intersil Corporation |
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| FSJ160R | FSJ160R - 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs - Intersil Corporation |
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| FSJ160D3 | FSJ160D3 - 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs - Intersil Corporation |
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| FSJ160D | FSJ160D - 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs - Intersil Corporation |
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| FSJ055D3 | FSJ055D3 - 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs - Intersil Corporation |
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| FSJ055D1 | FSJ055D1 - 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs - Intersil Corporation |
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| FSGYE230R4 | FSGYE230R4 - Radiation Hardened, SEGR Resistant N-Channel Power MOSFET - Intersil Corporation |
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| FSGYE230R3 | FSGYE230R3 - Radiation Hardened, SEGR Resistant N-Channel Power MOSFET - Intersil Corporation |
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| FSGS230R | FSGS230R - Radiation Hardened, SEGR Resistant N-Channel Power MOSFET - Intersil Corporation |
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| FSGS230D1 | FSGS230D1 - Radiation Hardened, SEGR Resistant N-Channel Power MOSFET - Intersil Corporation |
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| CA741 | CA741 - 0.9MHz Single and Dual, High Gain Operational Amplifiers for Military, Industrial and Commercial Applications - Intersil Corporation |
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| CA5470M | CA5470M - Quad, 14MHz, Microprocessor BiMOS-E Operational Amplifier with MOSFET Input/Bipolar Output - Intersil Corporation |
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| CA5470E | CA5470E - Quad, 14MHz, Microprocessor BiMOS-E Operational Amplifier with MOSFET Input/Bipolar Output - Intersil Corporation |
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