SRAM - Asynchronous Memory IC 256Kbit Parallel 25 ns 24-SOJ
Infineon
1-Mbit(64K × 16bit),并行接口,工作電壓:2.5V to 3.6V
INTEGRATED SILICON SOLUTION (ISSI)
SRAM Chip Async Dual 1.8V/2.5V/3V 128K-Bit 8K x 16 90ns 100-Pin VF-BGA
Infineon
IC SRAM 72MBIT PARALLEL 165FPBGA
Gsi Technology
IC DRAM 4GBIT 1.866GHZ 200WFBGA
Micron Technology
SDRAM - DDR Memory IC 512Mbit Parallel 133 MHz 750 ps 66-TSOP
Micron Technology
2Gb F-die DDR3 SDRAM 128M x16 1.5V speed 1866
Samsung
IC DRAM 32GBIT 2133MHZ 200VFBGA
Micron Technology
SRAM Chip Async Dual 1.8V/2.5V/3V 64K-Bit 4K x 16 65ns 100-Pin VF-BGA
Infineon
TRI-COLOR USB CONTROLLED HEMISPH
Adafruit Industries