
With the OptiMOS? 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package, MG-WDSON-2, RoHS
Infineon

MOSFET, N CHANNEL, 650V, 29A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.12ohm; Rds(on) Test Voltage Vgs: 18V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 165W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Rohm

MOSFET, N-CH, 600V, 46A, TO-3PF; Transistor Polarity: N Channel; Continuous Drain Current Id: 46A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 130W; Transistor Case Style: TO-3PF; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Rohm


