資料介紹
Based on mixed signal CMOS technology, Melexis US1881 is a Hall-effect device with high magnetic
sensitivity. This multi-purpose latch suits most of the application requirements.
The chopper-stabilized amplifier uses switched capacitor technique to suppress the offset generally observed
with Hall sensors and amplifiers. The CMOS technology makes this advanced technique possible and
contributes to smaller chip size and lower current consumption than bipolar technology. The small chip size is
also an important factor to minimize the effect of physical stress.
This combination results in more stable magnetic characteristics and enables faster and more precise design.
The wide operating voltage from 3.5V to 24V, low current consumption and large choice of operating
temperature range according to “L”, “K” and “E” specification make this device suitable for automotive,
industrial and consumer applications.
The output signal is open-drain type. Such output allows simple connectivity with TTL or CMOS logic by using
a pull-up resistor tied between a pull-up voltage and the device output.
sensitivity. This multi-purpose latch suits most of the application requirements.
The chopper-stabilized amplifier uses switched capacitor technique to suppress the offset generally observed
with Hall sensors and amplifiers. The CMOS technology makes this advanced technique possible and
contributes to smaller chip size and lower current consumption than bipolar technology. The small chip size is
also an important factor to minimize the effect of physical stress.
This combination results in more stable magnetic characteristics and enables faster and more precise design.
The wide operating voltage from 3.5V to 24V, low current consumption and large choice of operating
temperature range according to “L”, “K” and “E” specification make this device suitable for automotive,
industrial and consumer applications.
The output signal is open-drain type. Such output allows simple connectivity with TTL or CMOS logic by using
a pull-up resistor tied between a pull-up voltage and the device output.
US
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