Introduction of New Generation Field-Stop Shorted-Anode IGBT

　　隨著電力電子和半導體的快速發(fā)展，每一個電力電子應用都需要專用和專門的半導體開關器件從成本和性能的角度來看?，F(xiàn)場停止（FS）的IGBT提供較低的飽和壓降和較低的開關損耗與傳統(tǒng)的非穿通（NPT）IGBT。此外，一個相對較新的改進，集成的反并聯(lián)二極管的IGBT芯片通過使用短路陽極（SA）技術，使FS IGBT非常適合軟開關功率變換應用。

　　現(xiàn)場停止短路陽極溝槽IGBT與NPT

　　盡管NPT IGBT提高降低少數(shù)載流子的注入量和關閉過渡期間提高重組率的開關速度，這是不可取的，由于其較高的VCE（SAT）的高功率應用，因為它的N-基板必須輕摻雜，因此，較厚的基板需要維持電場關閉狀態(tài)時如圖1所示（一）。的N -基是IGBTs的飽和壓降的主要因素的厚度。

　　The “n” doped field-stop layer between “n-” drift layer and “p+” collector of a conventional NPT IGBT， as shown in Figure 1（b）， drastically improves the performance of IGBT. This is the field-stop IGBT concept. In the FS IGBT， the electric field rapidly decreases within the field-stop layer while gradually decreasing within “n-” drift layer. Therefore， the thickness of the “n-” drift layer and the saturation voltage drop can be significantly improved. The trench-gate structure also improves the saturation voltage drop. The field-stop layer of a FS IGBT accelerates the majority carrier recombination during the turn-off instance， and thereby， its tail current is much smaller than NPT or PT IGBTs. This leads to lower switching losses and lower turn-off energy， Eoff.