開發(fā)板進行簡單評價Egan FET

　　長期以來，廣泛的帶隙氮化鎵在硅（GaN硅）晶體管現(xiàn)在商業(yè)上可用。他們被吹捧為取代硅基MOSFET，這被證明是低效的許多高性能電源設(shè)計。最近，在Si基HEMT器件和場效應(yīng)管的幾個供應(yīng)商GaN已經(jīng)在市場上出現(xiàn)，其中高效電源轉(zhuǎn)換（EPC）。在過去的四年里，該公司一直在擴大其商用增強型家庭（常關(guān)）GaN FET場效應(yīng)管或根。今天，在低壓eGaN FET家庭約有十一成員，并在超高頻線八。

　　這些高性能、寬禁帶半導(dǎo)體晶體管被推薦用于各種高效率、高密度直流/直流轉(zhuǎn)換器和其他電源瞄準(zhǔn)新興應(yīng)用如無線電力傳輸、包絡(luò)跟蹤、射頻傳輸、太陽能微型逆變器、激光雷達(dá)、遙感和D類音頻放大器。幫助設(shè)計師了解硅功率MOSFET和eGaN FETs之間的微妙差異，從而促進他們在即將到來的電源解決方案的采用，為公司創(chuàng)造了許多應(yīng)用筆記，白皮書，并為其伊根FET視頻系列。

　　What’s more， to expedite the evaluation of eGAN FETs for power supply designs transitioning from silicon MOSFETs to eGaN FETs， EPC has released several development boards in the last few years. The most recent introductions， which include EPC9022 through EPC9030， offer half-bridge topology with an on-board gate driver. They are designed to simplify the evaluation of members in the company’s EPC8000 family of ultra-high-frequency， high-performance eGaN FETs. Currently， there are eight members in the EPC8000 family and there is a corresponding development board for each part， as shown in Table 1.