碳納米管薄膜是一種能應(yīng)用于場發(fā)射平面顯示器等器件中的新型冷陰極材料。該文用Ni作為催化劑，采用催化熱解法在硅片上制備了多壁碳納米管薄膜場發(fā)射陰極，反應(yīng)氣體為乙炔、氫氣和氮氣。用SEM和TEM分析了其結(jié)構(gòu)，證明了碳納米管的直徑在50~70 nm間。進(jìn)而采用二極管結(jié)構(gòu)，在優(yōu)于10-4Pa的真空度下，測試了它的場發(fā)射特性，理論分析表明碳納米管薄膜的場發(fā)射實際上來源于突出于薄膜表面的部分碳納米管頂端。該陰極的開啟電場為8 V/μm；在11 V/μm時測試到了最大的發(fā)射電流密度2 mA/cm2，滿足場發(fā)射平面顯示器的要求。

In this paper, Nanotubes films are grown by thermal chemical vapour deposition on silicon substrates with nickel as a catalyst particle. The SEM, TEM has been used in order to determine the structure of the films, which show that the diameters of nanotubes are 50~70 nm. characterization has been measured on the CNT-anode setup room temperature and in a vacuum chamber. The Fowler-Nordheim plot shows a good linear fit, indicating that the emission current only comes from the protruded nanotubes. Threshold field strength of this nanotubes film is about 8 V/μm for an emission current of 1 μA, and the most field emission current densities of more than 2 mA/cm2 are measured for 11 V/μm. In addition, the bright light spot can be observed, while emitted electron bombardment fluorescent screen.