200MHz高傳輸效率薄膜變壓器的設(shè)計與制備

實現(xiàn)了一種新型的基于硅IC 工藝的微波鐵氧體集成薄膜變壓器. 鐵氧體薄膜采用射頻磁控濺射法制備,SEM 觀察了SiO2 層上鐵氧體膜的表面形貌,表明薄膜容易開裂;能譜儀對薄膜成分的分析表明鐵氧體薄膜與SiO2 層和Al 膜附著性差. 通過濺射工藝參數(shù)及增加熱處理等工藝初步解決了以上存在的薄膜制備工藝與IC 工藝之間的兼容性問題. 采用標(biāo)準(zhǔn)硅基IC 工藝設(shè)計和制備了這種新型結(jié)構(gòu)的薄膜變壓器,對一組薄膜變壓器樣品的實驗參數(shù)在20～210 MHz 的頻率范圍內(nèi)作了測試. 測試結(jié)果表明:對于設(shè)計的匝數(shù)比為1 的薄膜變壓器,在90～210 MHz 的頻率范圍內(nèi)能獲得最高為79 %的變壓比和良好的波形傳輸能力.

A novel microwave ferrite thin2film t ransformer based on Si IC technology was presented. RF
magnet ron sp ut tering was used to prepare ferrite t hin film on SiO2 layer . The ferrite film of surface ap2 pear s crack by observation of SEM. EDS analysis of t hin film showed t hat t hin film has poor cohesiveness to SiO2 layer or Al film. These compatible p roblems of t hin film wit h IC technology were resolved t hrough sput tering parameter s modification and heating t reatment addition. The t hin2film t ransformer was fabrica2 tedand t ransmission parameters have been measured at 20 MHz～210 MHz. Experience result s showed that t he maximal Vout and V in radio of t he t hin2film t ransformer s is approximately 79 % at 90 MHz～210MHz ,and t he t hin2film t ransformer has fine waveform t ransmission ability at 20 MHz to 210 MHz.