產(chǎn)品
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FLM1213-8F X、Ku波段 內(nèi)部匹配 FET2023-12-06 16:21
產(chǎn)品型號(hào):FLM1213-8F 廠家:Sumitomo Electric Device Innov 型號(hào):FLM1213-8F 名稱: High Power GaAs FET高功率砷化鎵場(chǎng)效應(yīng)管 產(chǎn)地:日本 封裝:IA -
FLM5972-8F C波段 內(nèi)部匹配 FET2023-12-06 16:12
產(chǎn)品型號(hào):FLM5972-8F 廠家:Sumitomo Electric Device Innov 型號(hào):FLM5972-8F 名稱:High Power GaAs FET高功率砷化鎵場(chǎng)效應(yīng)管 產(chǎn)地:日本 封裝:lB -
FLM6472-12F C波段 內(nèi)部匹配 FET2023-12-06 16:04
產(chǎn)品型號(hào):FLM6472-12F 廠家:Sumitomo Electric Device Innov 型號(hào):FLM6472-12F 名稱:High Power GaAs FET高功率砷化鎵場(chǎng)效應(yīng)管 產(chǎn)地:日本 封裝:lK -
FLM6472-18F C波段 內(nèi)部匹配 FET2023-12-06 15:56
產(chǎn)品型號(hào):FLM6472-18F 廠家:Sumitomo Electric Device Innov 型號(hào):FLM6472-18F 名稱:High Power GaAs FET高功率砷化鎵場(chǎng)效應(yīng)管 產(chǎn)地:日本 封裝:lK -
FLM6472-25F C波段 內(nèi)部匹配 FET2023-12-06 15:49
產(chǎn)品型號(hào):FLM6472-25F 廠家:Sumitomo Electric Device Innov 型號(hào):FLM6472-25F 名稱:High Power GaAs FET高功率砷化鎵場(chǎng)效應(yīng)管 產(chǎn)地:日本 封裝:lK -
FLM6472-8F C波段 內(nèi)部匹配 FET2023-12-06 15:40
產(chǎn)品型號(hào):FLM6472-8F 廠家:Sumitomo Electric Device Innov 型號(hào):FLM6472-8F 名稱:High Power GaAs FET高功率砷化鎵場(chǎng)效應(yīng)管 產(chǎn)地:日本 封裝:lB -
FLM7179-12F C波段 內(nèi)部匹配 FET2023-12-06 15:29
產(chǎn)品型號(hào):FLM7179-12F 廠家:Sumitomo Electric Device Innov 型號(hào):FLM7179-12F 名稱:High Power GaAs FET高功率砷化鎵場(chǎng)效應(yīng)管 產(chǎn)地:日本 封裝:lK -
FLM7179-8F C波段 內(nèi)部匹配 FET2023-12-06 14:49
產(chǎn)品型號(hào):FLM7179-8F 廠家:Sumitomo Electric Device Innov 型號(hào):FLM7179-8F 名稱:High Power GaAs FET高功率砷化鎵場(chǎng)效應(yīng)管 產(chǎn)地:日本 封裝:lB -
FLM7185-12F C波段 內(nèi)部匹配 FET2023-12-06 14:42
產(chǎn)品型號(hào):FLM7185-12F 廠家:Sumitomo Electric Device Innov 型號(hào):FLM7185-12F 名稱:High Power GaAs FET高功率砷化鎵場(chǎng)效應(yīng)管 產(chǎn)地:日本 封裝:lK -
FLM7179-18F C波段 內(nèi)部匹配 FET2023-12-06 14:36
產(chǎn)品型號(hào):FLM7179-18F 廠家:Sumitomo Electric Device Innov 型號(hào):FLM7179-18F 名稱:High Power GaAs FET高功率砷化鎵場(chǎng)效應(yīng)管 產(chǎn)地:日本 封裝:lK